DocumentCode
1173157
Title
Analytical Model of Trapping Effects in Organic Thin-Film Transistors
Author
Erlen, Christoph ; Lugli, Paolo
Author_Institution
Dept. of Electr. Eng. & Inf. Technol., Tech. Univ. Munchen, Munich
Volume
56
Issue
4
fYear
2009
fDate
4/1/2009 12:00:00 AM
Firstpage
546
Lastpage
552
Abstract
We report an analytical model for organic thin-film transistors that accounts for the influence of trap states on the current voltage characteristics. As the subthreshold regime sensitively reacts to the presence of traps, it is used to extract approximate trap parameters from experimental transistor data. To demonstrate the capability of our method, a comparison with the results of 2-D drift-diffusion simulations is provided.
Keywords
semiconductor device models; thin film transistors; 2D drift-diffusion simulations; organic thin-film transistors; semiconductor device modeling; trapping effects; Analytical models; Current-voltage characteristics; Data mining; Electron traps; Organic thin film transistors; Radiative recombination; SPICE; Semiconductor device modeling; Spontaneous emission; Thin film transistors; Organic thin-film transistor (OTFT); SPICE; semiconductor device modeling; trapping;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2008.2011936
Filename
4787030
Link To Document