Title :
Analytical Model of Trapping Effects in Organic Thin-Film Transistors
Author :
Erlen, Christoph ; Lugli, Paolo
Author_Institution :
Dept. of Electr. Eng. & Inf. Technol., Tech. Univ. Munchen, Munich
fDate :
4/1/2009 12:00:00 AM
Abstract :
We report an analytical model for organic thin-film transistors that accounts for the influence of trap states on the current voltage characteristics. As the subthreshold regime sensitively reacts to the presence of traps, it is used to extract approximate trap parameters from experimental transistor data. To demonstrate the capability of our method, a comparison with the results of 2-D drift-diffusion simulations is provided.
Keywords :
semiconductor device models; thin film transistors; 2D drift-diffusion simulations; organic thin-film transistors; semiconductor device modeling; trapping effects; Analytical models; Current-voltage characteristics; Data mining; Electron traps; Organic thin film transistors; Radiative recombination; SPICE; Semiconductor device modeling; Spontaneous emission; Thin film transistors; Organic thin-film transistor (OTFT); SPICE; semiconductor device modeling; trapping;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.2011936
