Comparison between the effects of positive noncatastrophic HBM ESD stress in n-channel and p-channel power MOSFETs

Author

Zupac, Dragan ; Baum, Keith W. ; Kosier, Steven L. ; Schrimpf, Ronald D. ; Galloway, Kenneth F.

Author_Institution

Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA

Volume

12

Issue

10

fYear

1991

Firstpage

546

Lastpage

549

Abstract

The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain.<>

Keywords

electrostatic discharge; failure analysis; insulated gate field effect transistors; power transistors; reliability; I/V characteristics shift; current-voltage characteristics; device degradation; drain-to-source leakage current; human body model ESD stress; n-channel transistors; noncatastrophic HBM ESD stress; noncatastrophic damage; noncatastrophic positive ESD stress effects; p-channel transistors; power MOSFETs; Biological system modeling; Degradation; Electrostatic discharge; Humans; Internal stresses; Leakage current; MOSFET circuits; Power transistors; Testing; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.119184

Filename

119184