Experimental study of AlGaAs/GaAs HBT device design for power applications

Author

Hafizi, Madjid ; Streit, Dwight C. ; Tran, Liem T. ; Kobayashi, Kevin W. ; Umemoto, Donald K. ; Oki, Aaron K. ; Wang, Shing K.

Volume

12

Issue

11

fYear

1991

Firstpage

581

Lastpage

583

Abstract

An experimental study of AlGaAs/GaAs heterojunction bipolar transistor (HBT) device design for optimizing key DC and RF performance parameters relevant to power device applications is reported. The design of the collector, base, and base-emitter junction is investigated for improved power device performance, and novel device structures are presented. Device scaling effects and the extent to which air-bridged interconnect can reduce parasitics in large power devices are also explored. Power HBTs employing some of the optimized design features have achieved a power output of 1.2 W (4 W/mm) with 43% power-added efficiency at 10 GHz.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; power transistors; solid-state microwave devices; 1.2 W; 10 GHz; 43 percent; AlGaAs-GaAs; DC performance; HBT device design; RF performance; SHF; air-bridged interconnect; base design; base-emitter junction; collector design; device optimisation; device structures; heterojunction bipolar transistor; large power devices; power device applications; power output; power-added efficiency; scaling; semiconductors; Cutoff frequency; Design optimization; Doping; Epitaxial growth; FETs; Gallium arsenide; Heterojunction bipolar transistors; Impedance matching; Power amplifiers; Radio frequency;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.119204

Filename

119204