Annealing effects of carbon in n-channel LDD MOSFETs

Author

Or, B.S.S. ; Forbes, Leonard ; Haddad, H. ; Richling, W.

Author_Institution

Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA

Volume

12

Issue

11

fYear

1991

Firstpage

596

Lastpage

598

Abstract

The degradation pattern of lightly doped drain (LDD) structure MOSFETs with carbon doping under various steps has been studied. For a carbon-doped LDD device with first- and second-level metal and passivation layer but without any final anneal, the results show that a significant reduction in the shifts of the threshold voltage of MOSFETs with time can be achieved. The authors demonstrate that threshold voltage degradation has been reduced for carbon-doped devices and that a final anneal does not improve the hot-electron degradation of these devices. These results imply the existence of neutral electron traps in the gate oxides of MOSFETs.<>

Keywords

carbon; elemental semiconductors; hot carriers; insulated gate field effect transistors; semiconductor doping; silicon; Si-SiO/sub 2/; Si:C; SiO/sub 2/; annealing effects; degradation pattern; gate oxides; hot-electron degradation; n-channel LDD MOSFETs; neutral electron traps; passivation layer; second-level metal; semiconductors; threshold voltage degradation; threshold voltage shifts reduction; Annealing; Channel hot electron injection; Degradation; Doping; Electron traps; Etching; MOSFETs; Passivation; Stress measurement; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.119209

Filename

119209