Title :
Annealing effects of carbon in n-channel LDD MOSFETs
Author :
Or, B.S.S. ; Forbes, Leonard ; Haddad, H. ; Richling, W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
Abstract :
The degradation pattern of lightly doped drain (LDD) structure MOSFETs with carbon doping under various steps has been studied. For a carbon-doped LDD device with first- and second-level metal and passivation layer but without any final anneal, the results show that a significant reduction in the shifts of the threshold voltage of MOSFETs with time can be achieved. The authors demonstrate that threshold voltage degradation has been reduced for carbon-doped devices and that a final anneal does not improve the hot-electron degradation of these devices. These results imply the existence of neutral electron traps in the gate oxides of MOSFETs.<>
Keywords :
carbon; elemental semiconductors; hot carriers; insulated gate field effect transistors; semiconductor doping; silicon; Si-SiO/sub 2/; Si:C; SiO/sub 2/; annealing effects; degradation pattern; gate oxides; hot-electron degradation; n-channel LDD MOSFETs; neutral electron traps; passivation layer; second-level metal; semiconductors; threshold voltage degradation; threshold voltage shifts reduction; Annealing; Channel hot electron injection; Degradation; Doping; Electron traps; Etching; MOSFETs; Passivation; Stress measurement; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
