An ion-implanted diamond metal-insulator-semiconductor field-effect transistor

Author

Zeisse, Carl R. ; Hewett, Charles A. ; Nguyen, Richard ; Zeidler, James R. ; Wilson, Robert G.

Author_Institution

US Naval Ocean Syst. Center, San Diego, CA, USA

Volume

12

Issue

11

fYear

1991

Firstpage

602

Lastpage

604

Abstract

A p-type conducting layer has been formed in a substrate of semi-insulating natural diamond (type IIa) by boron implantation. Silicon dioxide was deposited over this layer to make an insulated-gate field-effect transistor. Saturation and pinch-off were both observed at room temperature. The transconductance was 3.9 mu S-mm/sup -1/ and the output conductance was 60 nS-mm/sup -1/. This is the first reported use of ion implantation to successfully fabricate a field-effect device in diamond.<>

Keywords

boron; diamond; elemental semiconductors; insulated gate field effect transistors; ion implantation; 300 K; B implantation; C:B; C:B field effect transistor; MISFET; MOSFET; SiO/sub 2/; SiO/sub 2/-C:B; field-effect device; insulated-gate field-effect transistor; ion implantation; output conductance; p-type conducting layer; pinch-off; room temperature characteristics; saturation; semi-insulating natural diamond; semiconductors; transconductance; type IIa diamond; Annealing; Atmospheric measurements; Boron; Etching; FETs; Gold; Insulation; Metal-insulator structures; Plasma temperature; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.119211

Filename

119211