Title : 
Dynamic Current-Matching Charge Pump and Gated-Offset Linearization Technique for Delta-Sigma Fractional-
 
  PLLs
 
         
        
            Author : 
Lin, Tsung-Hsien ; Ti, Ching-Lung ; Liu, Yao-Hong
         
        
            Author_Institution : 
Grad. Inst. of Electron. Eng. & the Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
         
        
        
        
        
            fDate : 
5/1/2009 12:00:00 AM
         
        
        
        
            Abstract : 
This paper proposes a novel charge pump (CP) circuit and a gated-offset linearization technique to improve the performance of a delta-sigma (????) fractional-N PLL. The proposed CP circuit achieves good up/down current matching, while the proposed linearization method enables the PFD/CP system to operate at an improved linear region. The proposed techniques are demonstrated in the design of a 2.4-GHz ???? fractional-N PLL. The experimental results show these techniques considerably improve the in-band phase noise and fractional spurs. In addition, the proposed gated-offset CP topology further lowers the reference spurs by more than 8 dB over the conventional fixed-offset approach. This chip is implemented in the TSMC 0.18-??m CMOS process. The fully-integrated ???? fractional-N PLL dissipates 22 mW from a 1.8-V supply voltage.
         
        
            Keywords : 
CMOS logic circuits; charge pump circuits; delta-sigma modulation; linearisation techniques; network synthesis; phase locked loops; phase noise; PFD-CP system; TSMC; delta-sigma fractional-N PLL design; dynamic current-matching charge pump circuit; fractional spur; frequency 2.4 GHz; gated-offset linearization technique; in-band phase noise; power 22 mW; up-down current matching; voltage 1.8 V; Charge pump (CP); delta-sigma modulation; fractional- $N$ phase-locked loop; phase-frequency detector (PFD); phase-locked loop (PLL);
         
        
        
            Journal_Title : 
Circuits and Systems I: Regular Papers, IEEE Transactions on
         
        
        
        
        
            DOI : 
10.1109/TCSI.2009.2016180