DocumentCode :
1173678
Title :
A new method of forming a thin single-crystal silicon diaphragm using merged epitaxial lateral overgrowth for sensor applications
Author :
Pak, James Jungho ; Neudeck, G.W. ; DeRoo, D.W.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
Volume :
12
Issue :
11
fYear :
1991
Firstpage :
614
Lastpage :
616
Abstract :
Merged epitaxial lateral overgrowth (MELO) of silicon was combined with an SiO/sub 2/ etch stop to form a 9- mu m-thick and 250- mu m*1000- mu m single-crystal Si membrane for micromechanical sensors. When epitaxial lateral overgrowth (ELO) silicon merges on SiO/sub 2/ islands, it forms a local silicon-on-insulator (SOI) film of moderate doping concentration. The SiO/sub 2/ island then acts as a near-perfect etch top in a KOH- or ethylenediamine-based solution. The silicon diaphragm thickness over a 3-in wafer has a standard deviation of 0.5 mu m and is precisely controlled by the epitaxial silicon growth rate ( approximately=0.1 mu m/min) rather than by conventional etching techniques. Diodes fabricated in the substrate and over MELO regions have nearly identical reverse-bias currents, indicating good quality silicon in the membrane.<>
Keywords :
diaphragms; elemental semiconductors; etching; membranes; micromechanical devices; semiconductor epitaxial layers; semiconductor growth; silicon; vapour phase epitaxial growth; 1000 micron; 3 in; 9 micron; KOH etch; MELO; Si; Si diaphragm; Si-SiO/sub 2/; SiO/sub 2/ etch stop; SiO/sub 2/ islands; epitaxial lateral overgrowth; ethylenediamine-based solution; local SOI film; merged epitaxial lateral overgrowth; micromechanical sensors; single-crystal Si membrane; Biomembranes; Boron; Diodes; Doping; Etching; Fabrication; Micromechanical devices; Silicon; Substrates; Thickness control;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.119215
Filename :
119215
Link To Document :
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