Source/Drain Formation of Self-Aligned Top-Gate Amorphous GaInZnO Thin-Film Transistors by $\hbox {NH}_{3}$ Plasma Treatment

The source/drain region of amorphous GaInZnO thin-film transistor with self-aligned top-gate structure was defined by simple NH₃ plasma treatment instead of complicated processes, such as ion implantation and activation. When the source/drain region of active layer was exposed to NH₃ gas plasma, the series resistance of the transistor decreased considerably. It exhibited electrical properties, such as a field-effect mobility of 6 cm²/V middots, a threshold voltage of 0.21 V, and a subthreshold swing of 0.23 V/dec.