Title :
Impact ionization and real-space transfer of minority carriers in charge injection transistors
Author :
Tedesco, C. ; Mastrapasqua, M. ; Canali, C. ; Luryi, S. ; Manfredi, M. ; Zanoni, E. ; Sivco, D.L. ; Cho, A.Y.
Author_Institution :
Dipartimento di Elettronica e Inf., Padova Univ., Italy
Abstract :
High electric fields in the channel of InGaAs-InAlAs heterostructure complementary charge injection transistor give rise to impact ionization and real-space transfer of minority holes from the channel. These phenomena are investigated by measuring light emission in the 1.1-3.1 eV energy range for different points on the electrical characteristics. The effective carrier temperature, determined from the exponential tails of electroluminescence spectra, is 2100 K in the channel and 450 K in the barrier.<>
Keywords :
III-V semiconductors; aluminium compounds; electroluminescence; gallium arsenide; hot electron transistors; impact ionisation; indium compounds; luminescence of inorganic solids; minority carriers; CHINT; InGaAs-InAlAs; charge injection transistors; effective carrier temperature; electrical characteristics; electroluminescence spectra; heterostructure complementary type; high electric fields; impact ionization; light emission; minority carriers; minority holes; real-space transfer; Charge carrier processes; Conductivity; Electrons; Energy measurement; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; Irrigation; Virtual colonoscopy;
Journal_Title :
Electron Device Letters, IEEE
