A comparative study of GaInP/GaAs heterojunction bipolar transistors grown by CBE using TBA/TBP and AsH/sub 3//PH/sub 3/ sources

Author

Ng, G.I. ; Pavlidis, D. ; Samelis, A. ; Pehlke, D. ; Garcia, J.C. ; Hirtz, J.P.

Author_Institution

Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA

Volume

15

Issue

10

fYear

1994

Firstpage

380

Lastpage

382

Abstract

GaInP/GaAs heterojunction bipolar transistors (HBT´s) have been fabricated on epitaxial layers grown by chemical beam epitaxy (CBE) using an all metalorganic approach. Reduced toxicity tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) were used for group V sources. DC results showed good base and collector current ideality factors of 1.23 and 1.05 respectively. The maximum DC current of 50 was obtained. A comparison of these results with HBT characteristics obtained using AsH/sub 3//PH/sub 3/ or TBA/PH/sub 3/ demonstrates the feasibility of replacing the toxic AsH/sub 3/ and PH/sub 3/ by less toxic TBA and TBP sources in the growth of GaInP/GaAs HBT´s.<>

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor growth; AsH/sub 3/; AsH/sub 3//PH/sub 3/ source; CBE; GaInP-GaAs; HBT characteristics; PH/sub 3/; TBA/TBP source; chemical beam epitaxy; current ideality factors; epitaxial layers; group V sources; heterojunction bipolar transistors; metalorganic approach; tertiarybutylarsine; tertiarybutylphosphine; toxicity reduction; Chemicals; Doping; Epitaxial growth; Epitaxial layers; Etching; Gallium arsenide; Heterojunction bipolar transistors; MOCVD; Molecular beam epitaxial growth;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.320974

Filename

320974