The combined effects of low pressure NH/sub 3/-annealing and H/sub 2/ plasma hydrogenation on polysilicon thin-film transistors

Author

Yang, Chien Kuo ; Lei, Tan Fu ; Lee, Chung Len

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

15

Issue

10

fYear

1994

Firstpage

389

Lastpage

390

Abstract

The low pressure NH/sub 3/-annealing and the H/sub 2/ plasma hydrogenation were jointly used to improve the characteristics of polysilicon thin-film transistors (TFT´s). It was found that the TFT´s after applying the above treatments achieved better subthreshold swings, threshold voltages, field effect mobilities, off currents, and reliability. It is believed that the improvement was due to the gate oxynitride formation and the H/sub 2/-plasma had a better passivation effect on the oxynitride.<>

Keywords

annealing; carrier mobility; elemental semiconductors; insulated gate field effect transistors; passivation; plasma applications; reliability; semiconductor technology; silicon; thin film transistors; H/sub 2/; H/sub 2/ plasma hydrogenation; NH/sub 3/; Si-SiNO; field effect mobilities; gate oxynitride formation; low pressure NH/sub 3/ annealing; offcurrents; passivation effect; polysilicon TFT; reliability; subthreshold swings; thin-film transistors; threshold voltages; Annealing; Hydrogen; Nitrogen; Passivation; Plasma devices; Plasma measurements; Plasma properties; Plasma sources; Thin film transistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.320977

Filename

320977