Title :
A simple edge termination for silicon carbide devices with nearly ideal breakdown voltage
Author :
Alok, Dev ; Baliga, B.J. ; McLarty, P.K.
Author_Institution :
Power Semicond. Res. Centre, North Carolina State Univ., Raleigh, NC, USA
Abstract :
In this paper, a simple edge termination is described which can achieve near ideal parallel plane breakdown for silicon carbide devices. This novel edge termination involves self aligned implantation of a neutral species on the edges of devices to form an amorphous layer. With this termination formed using argon implantation, the breakdown voltage of Schottky barrier diodes was measured to be very close to ideal plane parallel breakdown voltage.<>
Keywords :
Schottky-barrier diodes; argon; electric breakdown of solids; ion implantation; semiconductor devices; semiconductor materials; semiconductor technology; silicon compounds; Ar implantation; Schottky barrier diodes; SiC:Ar; amorphous layer; breakdown voltage; edge termination; nearly ideal breakdown voltage; neutral species; parallel plane breakdown; self aligned implantation; Argon; Breakdown voltage; Doping; Epitaxial layers; Implants; Schottky barriers; Schottky diodes; Semiconductor diodes; Semiconductor materials; Silicon carbide;
Journal_Title :
Electron Device Letters, IEEE
