DocumentCode :
1173893
Title :
A comprehensive CMOS APS crosstalk study: photoresponse model, technology, and design trends
Author :
Shcherback, Igor ; Danov, Tatiana ; Yadid-Pecht, Orly
Author_Institution :
VLSI Syst. Center, Ben-Gurion Univ., Beer-Sheva, Israel
Volume :
51
Issue :
12
fYear :
2004
Firstpage :
2033
Lastpage :
2041
Abstract :
In this paper the lateral photoresponse and crosstalk (CTK) in complementary metal-oxide-semiconductor (CMOS) photodiodes is investigated by means of a unique sub-micron scanning system (S-cube system) and numerical device simulation. An improved semi-analytical model developed for photoresponse estimation of a photodiode-based CMOS active pixel sensor reveals the photosignal and the CTK dependence on the pixels geometrical shape and arrangement within the array. The trends that promise to increase CMOS image sensor performance are presented and design tradeoffs intended to optimize the photoresponse and minimize CTK are discussed.
Keywords :
CMOS image sensors; optical crosstalk; photodiodes; CMOS active pixel sensor; CMOS image sensor; S-cube system; complementary metal-oxide-semiconductor photodiodes; crosstalk minimization; diffusion process; parameter estimation; photoresponse estimation; photoresponse optimization; pixel geometrical shape; submicron scanning system; Active shape model; CMOS image sensors; CMOS technology; Crosstalk; Design optimization; Numerical simulation; Photodiodes; Semiconductor device modeling; Sensor arrays; Solid modeling; 65; APS; Active pixel sensor; CMOS image sensor; crosstalk; diffusion process; modeling; parameter estimation;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2004.839742
Filename :
1362964
Link To Document :
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