SiGe pMOSFET´s with gate oxide fabricated by microwave electron cyclotron resonance plasma processing

A new process, electron cyclotron resonance (ECR) microwave plasma oxidation, has been developed to produce a gate-quality oxide directly on SiGe alloys. One μm Al gate Si/sub 0.86/Ge/sub 0.15/ p-metal-oxide-semiconductor field-effect-transistors (pMOSFET´s) with ECR-grown gate oxide have been fabricated. It is found that saturation transconductance increases from 48 mS/mm at 300 K to 60 mS/mm at 77 K. Low field hole mobilities of 167 cm²/V-s at 300 K and 530 cm²/V-s at 77 K have been obtained.