Title :
A new type of Schottky tunnel transistor
Author :
Kimura, Mitsuteru ; Matsudate, Tadashi
Author_Institution :
Dept. of Electr. Eng., Tohoku Gakuin Univ., Tagajo, Japan
Abstract :
A new type of tunnel transistor, in which electrons can tunnel through a very thin Schottky barrier between an n/sup +/- accumulation-layer formed just under a MOS gate for controlling the tunneling current and the Schottky metal, is proposed and demonstrated. This tunnel transistor has no threshold voltage in cathode current I/sub k/ vs. cathode voltage V/sub k/ curves. Theoretical calculations based on Stratton´s tunneling theory are carried out and have trends similar to the experimental results.<>
Keywords :
Schottky effect; insulated gate field effect transistors; semiconductor device models; tunnelling; MOS gate; Schottky barrier; Schottky tunnel transistor; Stratton´s tunneling theory; cathode current; cathode voltage; n/sup +/- accumulation-layer; tunneling current; Cathodes; Circuit simulation; Delay; Electrodes; Electrons; Hysteresis; MOSFETs; Schottky barriers; Threshold voltage; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
