Title :
MOS characteristics of ultrathin NO-grown oxynitrides
Author :
Bhat, M. ; Kim, J. ; Yan, J. ; Yoon, G.W. ; Han, L.K. ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
In this paper, we report for the first time, the growth of high quality ultrathin oxynitrides formed by nitridation of SiO/sub 2/ in nitric oxide (NO) ambient using in-situ rapid thermal processing (RTP). This process is highly self-limited compared with N/sub 2/O oxidation of silicon. A significant improvement in the interface endurance and charge trapping properties, under constant current stress, compared to pure O/sub 2/-grown and N/sub 2/O-grown oxides is observed. The NO growth process will have a great impact on future CMOS and EEPROM technologies.<>
Keywords :
CMOS integrated circuits; EPROM; MOS integrated circuits; electron traps; insulated gate field effect transistors; metal-insulator-semiconductor devices; nitridation; rapid thermal processing; CMOS; EEPROM technologies; MOS capacitors; MOS characteristics; NO; NO ambient; charge trapping properties; constant current stress; in-situ rapid thermal processing; interface endurance; nitridation; ultrathin oxynitrides; Bonding; CMOS technology; Chemical technology; Dielectric substrates; MOS capacitors; Oxidation; Silicon; Temperature; Thermal resistance; Thermal stresses;
Journal_Title :
Electron Device Letters, IEEE
