Title :
Independently driven DG MOSFETs for mixed-signal circuits: part II-applications on cross-coupled feedback and harmonics generation
Author :
Pei, Gen ; Kan, Edwin Chih-Chuan
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
Circuit applications utilizing the tight quasi-static and nonquasi-static channel coupling in independently driven double-gate (IDDG) MOSFETs are presented. The performances of cross-coupled differential amplifiers and mixers with IDDG are compared with those of the SDDG counterparts. The quasi-static coupling in IDDG increases output voltage swing and improves voltage waveform symmetry in the cross-coupled differential amplifier. The nonquasi-static coupling in IDDG provides fast feedback in the differential amplifiers, and allows higher frequencies in the input signals for harmonic generation in mixers. We have identified plausible advantages in IDDG that cannot be readily implemented by SDDG, which justifies the fabrication cost and parasitic capacitance penalty of IDDG.
Keywords :
MOSFET; circuit feedback; differential amplifiers; harmonic generation; mixed analogue-digital integrated circuits; mixers (circuits); IDDG fabrication cost; IDDG parasitic capacitance penalty; cross-coupled differential amplifiers; cross-coupled feedback; harmonics generation; high-frequency circuit; independently driven double-gate MOSFET; mixed-signal circuits; mixers; nonquasistatic channel coupling; output voltage swing; quasistatic channel coupling; voltage waveform symmetry; Circuit noise; Circuit optimization; Circuit topology; Coupling circuits; Differential amplifiers; Feedback circuits; Frequency conversion; MOSFETs; Parasitic capacitance; Voltage; 65; DG; Differential amplifier; MOSFET; double-gate; harmonic generation; high-frequency circuit; mixer;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.838337
