• DocumentCode
    1174002
  • Title

    Independently driven DG MOSFETs for mixed-signal circuits: part II-applications on cross-coupled feedback and harmonics generation

  • Author

    Pei, Gen ; Kan, Edwin Chih-Chuan

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
  • Volume
    51
  • Issue
    12
  • fYear
    2004
  • Firstpage
    2094
  • Lastpage
    2101
  • Abstract
    Circuit applications utilizing the tight quasi-static and nonquasi-static channel coupling in independently driven double-gate (IDDG) MOSFETs are presented. The performances of cross-coupled differential amplifiers and mixers with IDDG are compared with those of the SDDG counterparts. The quasi-static coupling in IDDG increases output voltage swing and improves voltage waveform symmetry in the cross-coupled differential amplifier. The nonquasi-static coupling in IDDG provides fast feedback in the differential amplifiers, and allows higher frequencies in the input signals for harmonic generation in mixers. We have identified plausible advantages in IDDG that cannot be readily implemented by SDDG, which justifies the fabrication cost and parasitic capacitance penalty of IDDG.
  • Keywords
    MOSFET; circuit feedback; differential amplifiers; harmonic generation; mixed analogue-digital integrated circuits; mixers (circuits); IDDG fabrication cost; IDDG parasitic capacitance penalty; cross-coupled differential amplifiers; cross-coupled feedback; harmonics generation; high-frequency circuit; independently driven double-gate MOSFET; mixed-signal circuits; mixers; nonquasistatic channel coupling; output voltage swing; quasistatic channel coupling; voltage waveform symmetry; Circuit noise; Circuit optimization; Circuit topology; Coupling circuits; Differential amplifiers; Feedback circuits; Frequency conversion; MOSFETs; Parasitic capacitance; Voltage; 65; DG; Differential amplifier; MOSFET; double-gate; harmonic generation; high-frequency circuit; mixer;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2004.838337
  • Filename
    1362973