Title :
1/f noise characterization of base current and emitter interfacial oxide breakup in n-p-n polyemitter bipolar transistors
Author :
Quon, D.S. ; Sonek, G.J. ; Li, G.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA
Abstract :
We propose using base 1/f noise to characterize the distribution of diffusion and tunneling components of base-current (I/sub b/) at the emitter poly/monosilicon interface in n-p-n polyemitter transistors. A noise model is constructed to interpret the I/sub b/ 1/f noise (S/sub iEB/) dependence on these combined currents. Measured I/sub b/ dependences of S/sub iEB/ increase progressively from I/sub b//sup 1.2/ to I/sub b//sup 2.0/ for transistors having emitter structures concomitant with increasing current gains and series emitter resistances ranging between 115-1800 and 7-33/spl Omega/, respectively. This is indicative of tunneling components in I/sub b//sup 2.0/ that increase with higher interfacial oxide continuity, and persist in epitaxially realigned emitters.<>
Keywords :
bipolar transistors; diffusion in solids; electric noise measurement; random noise; semiconductor device models; semiconductor device noise; tunnelling; 1/f noise characterization; 7 to 33 ohm; Si; base current; current gains; diffusion components; emitter interfacial oxide breakup; epitaxially realigned emitters; interfacial oxide continuity; n-p-n polyemitter bipolar transistors; noise model; series emitter resistances; tunneling components; Additive noise; Bipolar transistors; Circuit noise; Current measurement; Electrical resistance measurement; Frequency; Gain measurement; Integrated circuit noise; Semiconductor process modeling; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
