Title :
Integration and reliability of Cu-SiOC interconnect for ArF/90-nm node CMOS technology
Author :
Noguchi, Junji ; Oshima, Takayuki ; Konishi, Nobuhiro ; Ishikawa, Kensuke ; Sato, Kiyohiko ; Uno, Syouichi ; Hotta, Syoji ; Saito, Tatsuyuki ; Aoki, Hideo
Author_Institution :
Micro Device Div., Hitachi Ltd., Tokyo, Japan
Abstract :
Cu-SiOC interconnects for ArF/90-nm node technology were investigated. This paper describes the integration and reliability issues. The methods to improve chemical mechanical polishing delamination, SiOC damage and electrical shorts through the bottom interface of Cu interconnects were discussed. Reliability characteristics, such as stress-migration, electro-migration, and time-dependent dielectric breakdown (TDDB) were studied. Cu diffusion with via resistance increase by high-temperature stress, and TDDB degradation due to the ArF process were found. It was confirmed that the suggested integration process was mature and sufficiently reliable for normal operating conditions.
Keywords :
CMOS integrated circuits; argon compounds; copper; electric breakdown; electromigration; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; interface phenomena; permittivity; silicon compounds; 90 nm; ArF; CMOS technology; Cu diffusion; Cu-SiOC; Cu-SiOC interconnect; SiOC damage; chemical mechanical polishing delamination; electrical shorts; electromigration; high-temperature stress; integrated circuit interconnections; interface phenomena; metallization; permittivity; stress-migration; time-dependent dielectric breakdown; via resistance; CMOS technology; Chemical technology; Delamination; Dielectric breakdown; Dielectric constant; Integrated circuit interconnections; Integrated circuit reliability; Optical films; Optical interconnections; Random access memory; 65; Copper; dielectric breakdown; electromigration; integrated circuit interconnections; interface phenomena; metallization; permittivity; reliability;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.839755
