CAD tools to optimize power MOSFET performance using channel reverse conduction

Author

Simas, M. I Castro ; Freire, J Costa

Author_Institution

Dept. of Electr. & Comput. Eng., Tech. Univ. of Lisbon, Portugal

Volume

9

Issue

5

fYear

1994

fDate

9/1/1994 12:00:00 AM

Firstpage

522

Lastpage

531

Abstract

In this paper, a contribution to the characterization of power MOS transistors under optimized switching behavior is presented. This behavior is shown to be appropriate for improving the performance of new high frequency power processing topologies. Reverse conduction through the channel resistance is imposed, thus avoiding the problem of integral diode recovery time without resorting to external diodes. Control circuit design is discussed. Advantages and drawbacks are analyzed and tested in a series resonant converter. An insight into MOSFET reverse conduction modeling is presented, aimed at the development of an accurate model for computer aided design of topologies using the MOSFET´s bidirectional paths. Simulation results are shown to prove the accuracy of the model

Keywords

CAD; circuit resonance; digital simulation; electronic engineering computing; insulated gate field effect transistors; power convertors; power transistors; semiconductor device models; semiconductor switches; CAD tools; bidirectional paths; channel resistance; channel reverse conduction; computer aided design; control circuit design; high frequency power processing topologies; integral diode recovery time; optimized switching behavior; power MOS transistors; power MOSFET performance optimisation; reverse conduction; series resonant converter; simulation; Circuit simulation; Circuit synthesis; Circuit testing; Circuit topology; Computational modeling; Diodes; Frequency; MOSFET circuits; Power MOSFET; Resonance;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/63.321032

Filename

321032