• DocumentCode
    1174117
  • Title

    Electrical properties of Ta2O5 gate dielectric on strained-Si

  • Author

    Maiti, C.K. ; Chatterjee, S. ; Dalapati, G.K. ; Samanta, S.K.

  • Author_Institution
    Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
  • Volume
    39
  • Issue
    6
  • fYear
    2003
  • fDate
    3/20/2003 12:00:00 AM
  • Firstpage
    497
  • Lastpage
    499
  • Abstract
    High dielectric constant (high-k) thin Ta2O5 films have been deposited on tensilely strained silicon (strained-Si) layers using a microwave plasma enhanced chemical vapour deposition technique at a low temperature. The deposited Ta2O5 films show good electrical properties as gate dielectrics and are suitable for microelectronic applications. The feasibility of integration of strained-Si and high-k dielectrics has been demonstrated.
  • Keywords
    CMOS integrated circuits; MIS capacitors; dielectric thin films; elemental semiconductors; permittivity; plasma CVD; silicon; tantalum compounds; CMOS; MIS capacitors; Ta2O5-Si; dielectric constant; electrical properties; gate dielectric; high-k dielectrics; microelectronic applications; microwave plasma enhanced chemical vapour deposition technique; tensilely strained layers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030380
  • Filename
    1192191
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1174117