A unified method for modeling semiconductor power devices

Author

Goebel, Holger

Author_Institution

Univ. of Bundeswehr, Neubiberg, Germany

Volume

9

Issue

5

fYear

1994

fDate

9/1/1994 12:00:00 AM

Firstpage

497

Lastpage

505

Abstract

A unified method for modeling semiconductor power devices has been developed. The novelty of the method is a generalized description of the lightly doped region which is a common feature of all power devices. The charge carrier distribution in this region is calculated with a fast numerical algorithm. Depending on this carrier distribution the voltage across the low doped zone is calculated with analytical equations. This so called hybrid-description can be adjusted to the physical behavior of all power devices. By combining the hybrid-model with an analytical description of the remaining high doped regions the complete power device is described. The method has been applied to the power diode, the power bipolar transistor, and the IGBT. The developed circuit models have been implemented in a commercial circuit-simulator. The simulation results have been compared with measurements

Keywords

bipolar transistors; circuit analysis computing; digital simulation; insulated gate bipolar transistors; power electronics; power transistors; semiconductor device models; semiconductor diodes; IGBT; carrier distribution; charge carrier distribution; circuit models; commercial circuit-simulator; fast numerical algorithm; hybrid-model; lightly doped region; low doped zone; power bipolar transistor; power diode; semiconductor power devices modelling; unified method; Bipolar transistors; Charge carriers; Circuit analysis computing; Circuit simulation; Computational modeling; Equations; Insulated gate bipolar transistors; Low voltage; Power electronics; Semiconductor diodes;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/63.321035

Filename

321035