Title :
A unified method for modeling semiconductor power devices
Author_Institution :
Univ. of Bundeswehr, Neubiberg, Germany
fDate :
9/1/1994 12:00:00 AM
Abstract :
A unified method for modeling semiconductor power devices has been developed. The novelty of the method is a generalized description of the lightly doped region which is a common feature of all power devices. The charge carrier distribution in this region is calculated with a fast numerical algorithm. Depending on this carrier distribution the voltage across the low doped zone is calculated with analytical equations. This so called hybrid-description can be adjusted to the physical behavior of all power devices. By combining the hybrid-model with an analytical description of the remaining high doped regions the complete power device is described. The method has been applied to the power diode, the power bipolar transistor, and the IGBT. The developed circuit models have been implemented in a commercial circuit-simulator. The simulation results have been compared with measurements
Keywords :
bipolar transistors; circuit analysis computing; digital simulation; insulated gate bipolar transistors; power electronics; power transistors; semiconductor device models; semiconductor diodes; IGBT; carrier distribution; charge carrier distribution; circuit models; commercial circuit-simulator; fast numerical algorithm; hybrid-model; lightly doped region; low doped zone; power bipolar transistor; power diode; semiconductor power devices modelling; unified method; Bipolar transistors; Charge carriers; Circuit analysis computing; Circuit simulation; Computational modeling; Equations; Insulated gate bipolar transistors; Low voltage; Power electronics; Semiconductor diodes;
Journal_Title :
Power Electronics, IEEE Transactions on
