Title :
40 Gbit/s lumped-element modulator driver in GaAs pHEMTs
Author :
Lao, Z. ; Yu, M. ; Guinn, K. ; Lee, S. ; Ho, V. ; Xu, M. ; Radisic, V. ; Wang, K.C.
Author_Institution :
Adv. Product Dev. Center (APC), OpNext Inc., Thousand Oaks, CA, USA
fDate :
3/20/2003 12:00:00 AM
Abstract :
A high-speed and high-gain modulator driver circuit using 0.15 μm gate length GaAs pHEMT technology is presented. The IC was developed for driving electroabsorption modulators in 40 Gbit/s optical fibre systems. To meet application requirements a lumped-element approach was used with differential configuration. Measured results show the circuit operates at 40 Gbit/s with a swing of 3 Vp-p for single-ended and 6 Vp-p for differential output, and 8/10 ps rise/fall times.
Keywords :
HEMT integrated circuits; III-V semiconductors; driver circuits; electro-optical modulation; electroabsorption; gallium arsenide; optical communication equipment; optical fibre communication; 0.15 micron; 40 Gbit/s; GaAs; GaAs PHEMT IC; differential configuration; electroabsorption modulator; high-speed high-gain circuit; lightwave communication; lumped-element modulator driver; optical fibre system;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030305
