Title :
1.5 μm laser on GaAs with GaInNAsSb quinary quantum well
Author :
Li, L.H. ; Sallet, V. ; Patriarche, G. ; Largeau, L. ; Bouchoule, S. ; Merghem, K. ; Travers, L. ; Harmand, J.C.
Author_Institution :
Lab. de Photonique et de Nanostructures, CNRS, Marcoussis, France
fDate :
3/20/2003 12:00:00 AM
Abstract :
A 1.50 μm broad area edge emitting laser is demonstrated with a structure grown by molecular beam epitaxy on a GaAs substrate. The active region is based on a single GaInNAsSb quantum well. The threshold current density is 3.5 kA/cm2. Output power over 22 mW per facet is achieved.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; molecular beam epitaxial growth; quantum well lasers; 1.5 micron; 22 mW; GaAs substrate; GaInNAsSb quinary quantum well; broad area laser; edge emitting laser; molecular beam epitaxy; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030367
