Title :
High-power surface emitting semiconductor laser with extended vertical compound cavity
Author :
McInerney, J.G. ; Mooradian, A. ; Lewis, A. ; Shchegrov, A.V. ; Trzelecka, E. M S ; Lee, D. ; Watson, J.P. ; Liebman, M. ; Carey, G.P. ; Cantos, B.D. ; Hitchens, W.R. ; Heald, D.
Author_Institution :
Novalux Inc., Sunnyvale, CA, USA
fDate :
3/20/2003 12:00:00 AM
Abstract :
Novel, electrically pumped, vertical compound cavity InGaAs lasers emitting at 980 nm are described. These have generated 1 W continuous-wave multimode and 0.5 W continuous-wave in a fundamental TEM00 mode and single frequency, with 90% coupling efficiency into a singlemode fibre.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; semiconductor lasers; surface emitting lasers; 0.5 W; 1 W; 90 percent; 980 nm; InGaAs; InGaAs lasers; electrically pumped lasers; extended vertical compound cavity; high-power SEL; surface emitting semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030300
