Title :
Very low threshold vertical emitting laser operation in InP graphite photonic crystal slab on silicon
Author :
Mouette, J. ; Seassal, Christian ; Letartre, Xavier ; Rojo-Romeo, P. ; Leclereq, J.-L. ; Regreny, P. ; Viktorovitch, P. ; Jalaguier, E. ; Moriceau, H.
Author_Institution :
Lab. d´Electronique, Optoelectronique et Microsystemes, Ecole Centrale de Lyon, Ecully, France
fDate :
3/20/2003 12:00:00 AM
Abstract :
Graphite-lattice photonic crystal structures in InP-based heterostructures transferred onto silicon, including a multi-quantum well active layer, have been designed and fabricated. 1.5 μm vertical emission laser operation was observed at room temperature, with very low threshold (below 50 μW).
Keywords :
III-V semiconductors; indium compounds; photonic crystals; quantum well lasers; 1.5 micron; 50 muW; InP; InP heterostructure; Si; graphite-lattice photonic crystal structure; multi-quantum well active layer; silicon substrate; threshold power; vertical emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030371
