Title :
Photo-Assisted Wet-Etched III–V Heterostructure Laser Mirrors
Author :
Yi, E.-H. ; Parker, M.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ
fDate :
5/15/2009 12:00:00 AM
Abstract :
We demonstrate the first photo-assisted wet-etched flat-surface mirrors in III-V laser heterostructure having an average reflectance of 0.87 of the ideal cleaved facet reflectance R c independent of crystal orientation. The largest observed reflectance was 0.93R c. These lasers were fabricated using a 532-nm laser source, sulfuric acid, and exposed-metal mask. The lateral waveguiding formed from air-semiconductor interfaces produced an average internal loss of 28/cm (smallest of 14/cm) compared with similar cleaved-mirror dark-etched lasers having 46/cm.
Keywords :
III-V semiconductors; crystal orientation; laser mirrors; masks; semiconductor lasers; III-V heterostructure; air-semiconductor interfaces; cleaved-mirror dark-etched lasers; crystal orientation; exposed metal mask; flat surface mirrors; lateral waveguiding; photoassisted wet etched laser mirrors; sulfuric acid; wavelength 532 nm; Etched laser mirrors; semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2015892
