Title :
High-gain SOI polysilicon emitter transistors
Author :
Purbo, O.W. ; Selvakumar, C.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
The authors report the first high-gain polysilicon emitter bipolar transistors fabricated on zone-melting-recrystallized (ZMR) silicon-on-insulator (SOI) material. Current gains as high as 230 were obtained. Polysilicon emitter bipolar transistors made on bulk silicon wafers with identical and simultaneous heat treatments show significant differences in emitter resistance and DC characteristics as compared with SOI bipolar transistors. Post-metal anneal improves the current gain and base current ideality at low base-emitter voltages for both types of wafers.<>
Keywords :
annealing; bipolar transistors; semiconductor-insulator boundaries; DC characteristics; SOI bipolar transistors; Si-SiO/sub 2/; ZMR SOI material; base current ideality; base-emitter voltages; current gain; emitter resistance; high-gain polysilicon emitter bipolar transistors; polycrystalline Si; post metal anneal; zone melting recrystallised material; Bipolar transistors; Circuits; Dielectric substrates; Doping; Fabrication; Isolation technology; Positron emission tomography; Resistance heating; Silicon on insulator technology; Student members;
Journal_Title :
Electron Device Letters, IEEE
