DocumentCode
1174430
Title
180-GHz Gain-Bandwidth Product Back-Side-Illuminated GaInAs–AlInAs APDs
Author
Rouvié, Anne ; Carpentier, Danièle ; Décobert, Jean ; Lagay, Nadine ; Pommereau, Frédéric ; Achouche, Mohand
Author_Institution
III-V Lab., Alcatel-Thales, Marcoussis
Volume
21
Issue
11
fYear
2009
fDate
6/1/2009 12:00:00 AM
Firstpage
712
Lastpage
714
Abstract
This letter presents a comparative study of GaInAs-AlInAs avalanche photodiodes with different absorption layer thicknesses. Simulations concerning dark current and frequency response have been carried out to study the influence of the vertical structure on functional characteristics. Fabricated devices achieved gain-bandwidth product GtimesB as high as 180 GHz combined with very low dark current and low excess noise factor.
Keywords
III-V semiconductors; aluminium compounds; avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; GaInAs-AlInAs; absorption layer; avalanche photodiodes; back-side illumination; dark current; excess noise factor; frequency 180 GHz; frequency response; gain-bandwidth product; AlInAs; GaInAs; avalanche photodiode (APD); dark current; gain-bandwidth product; simulation;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2009.2015959
Filename
4787148
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