Title :
High power 0.25 /spl mu/m gate GaN HEMTs on sapphire with power density 4.2 W/mm at 10 GHz
Author :
Youn, D.-H. ; Kumar, Vipin ; Lee, J.-H. ; Schwindt, R. ; Chang, W.-J. ; Hong, J.-Y. ; Jeon, C.-M. ; Bae, S.-B. ; Park, M.-R. ; Lee, K.-S. ; Lee, J.-L. ; Lee, Joun-Ho ; Adesida, I.
Author_Institution :
Telecommun. Basic Res. Lab., Korea Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fDate :
3/20/2003 12:00:00 AM
Abstract :
Metal organic chemical vapour deposition-grown AlGaN/GaN high electron mobility transistors (HEMTs) with power density up to 4.2 W/mm, one of the highest values ever reported for 0.25 /spl mu/m gate-length AlGaN/GaN HEMTs, were fabricated on sapphire substrates. The devices exhibited maximum drain current density as high as 1370 mA/mm, high transconductance up to 223 mS/mm, short-circuit current gain cutoff frequency (f/sub T/) of 67 GHz, and maximum frequency of oscillation (f/sub max/) of 102 GHz.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; sapphire; substrates; vapour phase epitaxial growth; wide band gap semiconductors; 0.25 micron; 102 GHz; 223 mS/mm; 67 GHz; Al/sub 2/O/sub 3/; AlGaN-GaN; DC performance; MOCVD grown HEMTs; RF performance; high electron mobility transistors; high power GaN HEMTs; metal organic CVD; metal organic chemical vapour deposition; power density; sapphire substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030339
