Title :
Intersubband absorption at λ ∼ 2.1 μm in A-plane GaN/AlN multiple quantum wells
Author :
Gmachl, C. ; Ng, Hock M.
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
fDate :
3/20/2003 12:00:00 AM
Abstract :
Intersubband optical absorption at λ ∼ 2.1 μm wavelength in doped 17.5 Å wide GaN quantum wells (QWs) with 51 Å wide intermediate AlN barriers is reported. A ∼600 nm thick GaN template and 15 QWs have been grown by molecular beam epitaxy on R-plane sapphire substrate and display pure A-plane orientation. QWs with A-plane orientation are essentially free from spontaneous polarisation, which is expected to greatly simplify the design of GaN/Al(Ga)N devices employing intersubband transitions.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; light absorption; molecular beam epitaxial growth; semiconductor quantum wells; wide band gap semiconductors; 2.1 micron; A-plane orientation; Al2O3; GaN-AlN; GaN/AlN multiple quantum well; R-plane sapphire substrate; intersubband optical absorption; molecular beam epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030381
