Title :
Effects of RF stress on power and pulsed IV characteristics of AlGaN/GaN HEMTs with field-plate gates
Author :
Lee, C. ; Tserng, H. ; Witkowski, L. ; Saunier, P. ; Guo, S. ; Albert, B. ; Birkhahn, R. ; Munns, G.
Author_Institution :
TriQuint Semicond. Texas, Richardson, TX, USA
Abstract :
The effects of RF stress on power and pulsed IV characteristics of field-plated AlGaN/GaN HEMTs fabricated on two different epitaxial structures are presented. The power degradation characteristics are shown. The RF stress resulted in different degrees of RF voltage and current swing reduction on the two wafers. The current dispersion became more aggravated after RF stress under high quiescent drain bias conditions in one of the structures.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; etching; gallium compounds; isolation technology; power HEMT; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN HEMT; MOCVD; RF stress; epitaxial structures; field plate gates; power degradation characteristics; pulsed IV characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20046921
