DocumentCode
1175237
Title
Effects of RF stress on power and pulsed IV characteristics of AlGaN/GaN HEMTs with field-plate gates
Author
Lee, C. ; Tserng, H. ; Witkowski, L. ; Saunier, P. ; Guo, S. ; Albert, B. ; Birkhahn, R. ; Munns, G.
Author_Institution
TriQuint Semicond. Texas, Richardson, TX, USA
Volume
40
Issue
24
fYear
2004
Firstpage
1547
Lastpage
1548
Abstract
The effects of RF stress on power and pulsed IV characteristics of field-plated AlGaN/GaN HEMTs fabricated on two different epitaxial structures are presented. The power degradation characteristics are shown. The RF stress resulted in different degrees of RF voltage and current swing reduction on the two wafers. The current dispersion became more aggravated after RF stress under high quiescent drain bias conditions in one of the structures.
Keywords
III-V semiconductors; MOCVD; aluminium compounds; etching; gallium compounds; isolation technology; power HEMT; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN HEMT; MOCVD; RF stress; epitaxial structures; field plate gates; power degradation characteristics; pulsed IV characteristics;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20046921
Filename
1363668
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