Improved vertically stacked Si/SiGe resonant interband tunnel diode pair with small peak voltage shift and unequal peak currents

Author

Jin, N. ; Chung, S.-Y. ; Yu, R. ; Berger, P.R. ; Thompson, P.E.

Author_Institution

Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA

Volume

40

Issue

24

fYear

2004

Firstpage

1548

Lastpage

1550

Abstract

A vertically integrated and serially connected npnp Si-based resonant interband tunnelling diode (RITD) pair is realised with low temperature molecular beam epitaxy (MBE) by monolithically stacking two RITDs with different spacer thicknesses. The asymmetric design manifests as unequal peak current densities that provide for much larger and uniform separation of the holding states for multi-valued logic. A δ-doped backwards diode connects the two serially connected RITDs with a very small series resistance. The I-V characteristic of the improved vertically integrated RITDs demonstrates two negative differential resistance (NDR) regions in the forward biasing condition with a small peak shift and unequal peak currents.

Keywords

Ge-Si alloys; elemental semiconductors; integrated logic circuits; molecular beam epitaxial growth; multivalued logic circuits; negative resistance; resonant tunnelling diodes; semiconductor growth; semiconductor materials; silicon; I-V characteristics; Si-SiGe; Si-SiGe resonant interband tunnel diode pair; asymmetric design; delta doped backwards diode; forward biasing condition; low temperature molecular beam epitaxy; multivalued logic circuits; n-p-n-p Si-based resonant interband tunnelling diode; negative differential resistance; series resistance; small peak voltage shift; unequal peak currents;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20046078

Filename

1363669