AlInAs-GaInAs HEMT for microwave and millimeter-wave applications

Author

Mishra, Umesh K. ; Brown, April S. ; Delaney, M.J. ; Greiling, Paul T. ; Krumm, Charles F.

Author_Institution

Hughes Res. Lab., Malibu, CA, USA

Volume

37

Issue

9

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

1279

Lastpage

1285

Abstract

The status of lattice-matched high-electron-mobility transistors (HEMTs) and pseudomorphic AlInAs-GaInAs grown on In substrates is reviewed. The best lattice-matched devices with 0.1-μm gate length had a transconductance g_m=1080 mS/mm and a unity current gain cutoff frequency f_T=178 GHz, whereas similar pseudomorphic HEMTs had g_m=1160 mS/mm and f_T=210 GHz. Single-stage V-band amplifiers demonstrated 1.3- and 1.5-dB noise figures and 9.5- and 8.0-dB associated gains for the lattice-matched and pseudomorphic HEMTs, respectively. The best performance achieved was a minimum noise figure of F_min=0.8 dB with a small-signal gain of G_a=8.7 dB

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.1 micron; 0.8 to 1.5 dB; 1080 mS; 1160 mS; 8 to 9.5 dB; AlInAs-GaInAs; HEMT; III-V semiconductors; In substrates; InP; V-band; high-electron-mobility transistors; lattice-matched devices; microwave devices; millimeter-wave applications; single stage amplifier; submicron gate length; transconductance; unity current gain cutoff frequency; Frequency; Gallium arsenide; HEMTs; Indium phosphide; Laboratories; Microwave devices; Millimeter wave communication; Millimeter wave radar; Noise figure; Phased arrays;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.32210

Filename

32210