Title :
RF reliability performance of AlGaN/GaN HEMTs on Si substrate at 10 GHz
Author :
Dumka, D.C. ; Lee, C. ; Tserng, H.Q. ; Saunier, P.
Author_Institution :
R&D Eng., TriQuint Semicond. Texas, Richardson, TX, USA
Abstract :
RF reliability performance of AlGaN/GaN HEMTs on Si substrate at 10 GHz is presented for the first time. Devices were fabricated in MBE-grown AlGaN/GaN on a two- inch Si (111) substrate. Devices demonstrating continuous wave output power between 3.9 and 6.2 W/mm are used in this study. Drifts in output power, PAE, drain current and gate current under RF stress at various biases are measured. A device biased at a drain voltage of 40 V for initial output power of 6.2 W/mm showed a small power drift of about 0.5 dB in 125 h of stress, indicating a promising reliability of GaN HEMTs on Si.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; molecular beam epitaxial growth; semiconductor device reliability; semiconductor epitaxial layers; semiconductor growth; silicon; wide band gap semiconductors; 10 GHz; 125 h; 40 V; AlGaN-GaN; AlGaN-GaN HEMT; MBE grown AlGaN-GaN; RF reliability performance; Si; drain current; gate current; molecular beam epitaxial growth; silicon substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20046746
