Title :
DC and transmission line models for a high electron mobility transistor
Author :
Huang, Di-Hui ; Lin, Hung C.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fDate :
9/1/1989 12:00:00 AM
Abstract :
Two improved DC models are developed to describe the output I -V (current-voltage) characteristics and small-signal parameters of a GaAs high-electron-mobility transistor (HEMT). A simple analytical, nonlinear, charge-control model for a two-dimensional electron gas is introduced and included in one of the DC models. The HEMT is modeled as a transmission line for the microwave-frequency AC analysis, and its microwave performance is predicted by the parameters obtained from fitting DC characteristics. Both DC and AC model predictions show a good agreement with experimental results for a 0.3-μm GaAs HEMT
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; semiconductor device models; solid-state microwave devices; DC models; GaAs; HEMT; III-V semiconductor; high electron mobility transistor; microwave performance; microwave-frequency AC analysis; nonlinear charge-control model; output I/V characteristics; small-signal parameters; transmission line models; two-dimensional electron gas; Analytical models; Circuits; Electron mobility; Gallium arsenide; HEMTs; MODFETs; Microwave frequencies; Performance analysis; Predictive models; Transmission lines;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
