An analytical model for I-V and small-signal characteristics of planar-doped HEMTs

Author

Wang, Guan-Wu ; Eastman, Lester F.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

37

Issue

9

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

1395

Lastpage

1400

Abstract

An analytical current-voltage (I-V) model for planar-doped HEMTs is developed. This compact model covers the complete range of I-V characteristics, including the current saturation region and parasitic conduction in the electron-supplying layer. Analytical expressions for the small-signal parameters and current-gain cutoff frequency are derived from the I-V model. Modeling results for a 0.1-μm-gate planar-doped AlInAs-GaInAs HEMT show excellent agreement with measured characteristics. Threshold voltages and parasitic conduction in planar-doped and uniformly doped HEMTs are also compared and discussed

Keywords

high electron mobility transistors; semiconductor device models; semiconductor doping; solid-state microwave devices; 0.1 micron; AlInAs-GaInAs; I-V characteristics; analytical model; current saturation region; current-gain cutoff frequency; electron-supplying layer; microwave devices; parasitic conduction; planar-doped HEMTs; semiconductors; small-signal characteristics; Analytical models; Circuit simulation; Current-voltage characteristics; Doping; Electrons; Gallium arsenide; HEMTs; MODFETs; Semiconductor process modeling; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.32223

Filename

32223