Title :
Computer-aided noise analysis of MESFET and HEMT mixers
Author :
Rizzoli, Vittorio ; Mastri, Franco ; Cecchetti, C.
Author_Institution :
Dept. of Electron., Inf. & Syst., Bologna Univ., Italy
fDate :
9/1/1989 12:00:00 AM
Abstract :
A numerical approach to the noise analysis of MESFET and HEMT mixers of arbitrary topology is discussed. A qualitative picture of the complex physical mechanisms responsible for the generation of the intermediate frequency (IF) noise is outlined, and the corresponding computational algorithms are presented. The derivation of a noisy nonlinear model for the microwave FET is addressed, and it is shown that a satisfactory solution to this problem can be obtained by combining a conventional time-domain model with standard noise information. The method has been implemented in a computer program designed to work in conjunction with an existing general-purpose harmonic-balance simulator. An application is described in detail to demonstrate the excellent performance of this software tool
Keywords :
Schottky gate field effect transistors; circuit analysis computing; electron device noise; equivalent circuits; field effect transistor circuits; high electron mobility transistors; random noise; semiconductor device models; solid-state microwave circuits; HEMT mixers; IF noise; MESFET mixers; arbitrary topology; computational algorithms; computer aided noise analysis; computer program; general-purpose harmonic-balance simulator; intermediate frequency; microwave FET; microwave mixers; noisy nonlinear model; standard noise information; time-domain model; Computational modeling; Computer simulation; Frequency; HEMTs; MESFETs; Microwave FETs; Noise generators; Physics computing; Time domain analysis; Topology;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
