Variation Tolerance in a Multichannel Carbon-Nanotube Transistor for High-Speed Digital Circuits

Author

Raychowdhury, Arijit ; De, Vivek K. ; Kurtin, Juanita ; Borkar, Shekhar Y. ; Roy, Kaushik ; Keshavarzi, Ali

Author_Institution

Circuits Res. Lab., Intel Corp., Hillsboro, OR

Volume

56

Issue

3

fYear

2009

fDate

3/1/2009 12:00:00 AM

Firstpage

383

Lastpage

392

Abstract

This paper introduces the theory of a carbon-nanotube multichannel transistor and shows that, due to statistical averaging in such a structure, a lot of variations in growth and processing can be tolerated. A model of such a structure has been presented, and Monte Carlo simulations have been performed to identify which of the imperfections and sources of variation are more critical than others. We use this theoretical framework to study short and multichannel carbon-nanotube FET structures for high-performance VLSI.

Keywords

Monte Carlo methods; VLSI; carbon nanotubes; digital integrated circuits; field effect transistors; high-speed integrated circuits; nanoelectronics; nanotube devices; C; FET structures; Monte Carlo simulation; high-performance VLSI; high-speed digital circuits; multichannel carbon-nanotube transistor; statistical averaging; Carbon nanotubes; Conducting materials; Digital circuits; Electrostatics; FETs; High K dielectric materials; MOSFETs; Semiconductivity; Semiconductor materials; Silicon; Carbon nanotube transistor; Monte Carlo (MC) simulations; variation tolerance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.2010604

Filename

4787258