A new self-alignment technology for sub-quarter-micron-gate FETs operating in the Ka-band

Author

Yanokura, Eiji ; Mori, Mitsuhiro ; Hiruma, Kenji ; Takahashi, Susumu

Author_Institution

Hitachi Ltd., Tokyo, Japan

Volume

37

Issue

9

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

1466

Lastpage

1471

Abstract

A self-alignment technology is proposed that allows fabrication of gates of less than 100 nm using conventional optical lithography. An offset gate structure is realized using this method. The technology is applied to high-power GaAs MESFETs consisting of many individual FETs. The uniformity of the FET characteristics is checked to show reproducibility. The input-output power characteristics of a MESFET with a 3.6-mm gate width were measured at 28 GHz. A linear gain of 4.0 dB and a saturation power of 0.8 W were obtained, demonstrating the overall effectiveness of this technology. It is shown that a 50-nm gate can be fabricated with this technology. A MESFET with a 90-nm gate length that was fabricated and evaluated at high frequency to demonstrate the technology is discussed

Keywords

Schottky gate field effect transistors; photolithography; power transistors; semiconductor technology; solid-state microwave devices; 0.8 W; 28 GHz; 3.6 mm; 4 dB; 50 to 100 nm; FET characteristics; GaAs; Ka-band; SHF; fabrication; input-output power characteristics; microwave device; offset gate structure; optical lithography; self-alignment technology; sub-quarter-micron-gate; submicron gate; FETs; Frequency; Gain; Gallium arsenide; Lithography; MESFETs; Optical device fabrication; Optical saturation; Power measurement; Reproducibility of results;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.32232

Filename

32232