• DocumentCode
    1175525
  • Title

    A large-signal HSPICE model for the heterojunction bipolar transistor

  • Author

    Sharma, Arvind Kumar ; Oki, A.K.

  • Volume
    37
  • Issue
    9
  • fYear
    1989
  • fDate
    9/1/1989 12:00:00 AM
  • Firstpage
    1472
  • Lastpage
    1475
  • Abstract
    The development of an accurate nonlinear HSPICE model for a 3-×10-μm2 heterojunction bipolar transistor (HBT) is described. The model allows the simulation of nonlinear measurements such as gain at the 1-dB compression point (P1 dB) and third-order intercept point. Experimental data characterizing an HBT at 12.5 GHz are presented, demonstrating the validity of the model for MMIC chip designs
  • Keywords
    MMIC; S-parameters; circuit CAD; heterojunction bipolar transistors; semiconductor device models; solid-state microwave devices; 12.5 GHz; CAD; HBT; MMIC chip designs; SHF; heterojunction bipolar transistor; large-signal HSPICE model; microwave devices; nonlinear measurements; simulation; Circuit simulation; Forward contracts; Gallium arsenide; Gold; Heterojunction bipolar transistors; MMICs; Microwave technology; Molecular beam epitaxial growth; Schottky diodes; Thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.32233
  • Filename
    32233
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1175525