An analytical two-dimensional perturbation method to model submicron GaAs MESFETs

Author

Donkor, E. ; Jain, F.C.

Author_Institution

Dept. of Electr. & Syst. Eng., Connecticut Univ., Storrs, CT, USA

Volume

37

Issue

9

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

1484

Lastpage

1487

Abstract

A two-dimensional analytical model has been developed for finding the potential distribution in submicron GaAs MESFETs. The potential distribution is obtained by solving Poisson´s equation with nonrectangular boundary conditions using a perturbation method. The expression for the potential is used to derive the current-voltage relation for GaAs MESFETs having channel lengths ranging from 0.2 to 0.9 μm. The model is applicable in the linear, saturation, and subthreshold regimes of the current-voltage characteristics. Numerically simulated results are compared with experimental data and are found to be in good agreement

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; perturbation techniques; semiconductor device models; solid-state microwave devices; 0.2 to 0.9 micron; 2D analytical model; GaAs; III-V semiconductors; Poisson´s equation; channel lengths; current-voltage characteristics; linear saturation regime; microwave devices; nonrectangular boundary conditions; potential distribution; submicron MESFET; subthreshold regimes; two-dimensional perturbation method; Analytical models; Boundary conditions; Design methodology; Electric variables; Gallium arsenide; Laplace equations; MESFETs; Microwave oscillators; Perturbation methods; Poisson equations;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.32237

Filename

32237