A fully matched high linearity 2-W PHEMT MMIC power amplifier for 3.5 GHz applications

Author

Chu, Chen-Kuo ; Huang, Hou-Kuei ; Liu, Hong-Zhi ; Chiu, Ray-Jay ; Lin, Che-Hung ; Wang, Chih-Cheng ; Houng, Mau-Phon ; Wang, Yeong-Her ; Hsu, Chuan-Chien ; Wu, Wang ; Wu, Chang-Luen ; Chang, Chian-Sern

Author_Institution

Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan

Volume

15

Issue

10

fYear

2005

Firstpage

667

Lastpage

669

Abstract

A 2-W monolithic microwave integrated circuit power amplifier, operating between 3.3 and 3.8GHz by implementing AlGaAs/InGaAs/GaAs pseudomorphic high electronic mobility transistor for the applications of wideband code division multiple access, wireless local loop, and multichannel multipoint distribution service, is demonstrated. This two-stage amplifier is designed to fully match 50Ω input and output impedances. With a dual-bias configuration, the amplifier possesses the characteristics of 30.4dB small-signal gain and 34dBm 1-dB gain compression power with 37.1% power added efficiency. Moreover, with a single carrier output power level of 24dBm, high linearity with a 43.5-dBm third-order intercept point operating at 3.5GHz is also achieved.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; code division multiple access; gallium arsenide; indium compounds; radio access networks; 2 W; 3.3 to 3.8 GHz; 50 ohm; AlGaAs-InGaAs-GaAs; PHEMT MMIC power amplifier; dual-bias configuration; monolithic microwave integrated circuit power amplifier; multichannel multipoint distribution service; pseudomorphic high electronic mobility transistor; two-stage amplifier; wideband code division multiple access; wireless local loop; Application specific integrated circuits; Broadband amplifiers; High power amplifiers; Linearity; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; PHEMTs; Power amplifiers; Monolithic microwave integrated circuit (MMIC); power amplifier (PA); pseudomorphic high electronic mobility transistor (PHEMT); wideband code division multiple access (W-CDMA);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.856852

Filename

1512216