A wide-band CMOS injection-locked ring oscillator

Author

Liang-Hung Lu ; Jun-Chau Chien

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

15

Issue

10

fYear

2005

Firstpage

676

Lastpage

678

Abstract

An injection-locked ring oscillator fabricated in a 0.18-μm CMOS process is presented for high-speed applications. By tuning the free-running frequency, the proposed circuit provides 2:1 and 4:1 frequency division over a wide input frequency range. The measured input frequency range covers 16.7-25.2 GHz and 41.2-46.9 GHz for 2:1 and 4:1 frequency division, respectively. The divider core operates at a 1.8-V supply voltage with a power consumption between 21.0 and 23.8mW for the entire frequency tuning range.

Keywords

CMOS integrated circuits; MMIC oscillators; field effect MIMIC; frequency dividers; injection locked oscillators; millimetre wave oscillators; 0.18 micron; 1.8 V; 16.7 to 25.2 GHz; 21 to 23.8 mW; 41.2 to 46.9 GHz; CMOS process; differential injection; divider core; free-running frequency; frequency divider; injection-locked ring oscillator; locking range enhancement; wide tuning range; wideband CMOS oscillator; CMOS technology; Circuit optimization; Energy consumption; Frequency conversion; Frequency synthesizers; Parasitic capacitance; Ring oscillators; Tail; Tuning; Wideband; Differential injection; frequency divider; injection-locked ring oscillator; locking range enhancement; wide tuning range;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.856848

Filename

1512219