A compact 2.4/5.2-GHz CMOS dual-band low-noise amplifier

Author

Liang-Hung Lu ; Hsieh-Hung Hsieh ; Yu-Shun Wang

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

15

Issue

10

fYear

2005

Firstpage

685

Lastpage

687

Abstract

This letter presents a fully integrated 2.4/5.2-GHz dual-band low-noise amplifier (LNA) for WLAN applications. By switching the input transconductance and the output capacitance, the narrow-band gain and impedance matching are achieved at the 2.4-GHz and the 5.2-GHz frequency bands. Using a standard 0.18-μm CMOS process, a compact dual-band LNA with a chip size comparable to a single-band one is realized in the proposed topology for a minimum hardware cost. The fabricated circuit exhibits gains of 10.1dB and 10.9dB, and noise figures of 2.9dB and 3.7dB at the two frequency bands, respectively.

Keywords

CMOS integrated circuits; MMIC amplifiers; UHF amplifiers; impedance matching; wireless LAN; 0.18 micron; 10.1 dB; 10.9 dB; 2.4 GHz; 2.9 dB; 3.7 dB; 5.2 GHz; CMOS RF; CMOS low-noise amplifier; CMOS process; cascode amplifier; dual-band low-noise amplifier; impedance matching; source degeneration; wireless LAN; CMOS process; Capacitance; Circuit topology; Dual band; Frequency; Impedance matching; Low-noise amplifiers; Narrowband; Transconductance; Wireless LAN; CMOS RF; Cascode amplifier; dual-band; impedance matching; low-noise amplifier (LNA); multimode; source degeneration;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.856845

Filename

1512222