DocumentCode :
1176316
Title :
Development of microstrip gas chambers on substrates with electronic conductivity
Author :
Bouclier, R. ; Garabatos, C. ; Manzin, G. ; Sauli, F. ; Shekhtman, L. ; Temmel, T. ; Della Mea, G. ; Maggioni, G. ; Rigato, V. ; Logachenko, I.
Author_Institution :
CERN, Geneva, Switzerland
Volume :
41
Issue :
4
fYear :
1994
fDate :
8/1/1994 12:00:00 AM
Firstpage :
821
Lastpage :
825
Abstract :
This paper describes several recent developments on microstrip gas chambers (MSGCs). We have studied the operating behaviour of the detectors in different gas mixtures; maximum stable gains have been achieved in mixtures of argon and dimethyl-ether (DME) in almost equal proportions. Using detectors manufactured on semiconducting glass substrates, capable of withstanding very high rates (above 106 mm-2 s-1), we have demonstrated extended lifetime without gain modifications up to a collected charge of 130 mC cm-1 in clean laboratory operating conditions. We have also verified that relaxing the requirements on cleanness conditions, either in the gas mixing system or in the detector construction, may result in fast ageing of the devices under irradiation. As an alternative to semiconducting glass, we have developed a novel technique to coat regular glass with a thin lead silicate layer having an electron conductivity; a new development consisting in coating already manufactured MSGCs with the thin semiconducting layer is also described. The preliminary results show an excellent rate capability for this kind of device, intrinsically simpler to manufacture
Keywords :
ageing; amplification; position sensitive particle detectors; proportional counters; Ar dimethylether; SiO2-PbO; ageing; gain; lifetime; microstrip gas chambers; semiconducting glass substrates; substrates; Aging; Argon; Detectors; Glass manufacturing; Laboratories; Lead compounds; Microstrip; Semiconductivity; Semiconductor device manufacture; Substrates;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.322813
Filename :
322813
Link To Document :
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