Title :
Demonstration of a dual-depletion-region electroabsorption modulator at 1.55-μm wavelength for high-speed and low-driving-voltage performance
Author :
Shi, J.-W. ; Hsieh, C.-A. ; Shiao, A.-C. ; Wu, Y.-S. ; Huang, F.-H. ; Chen, S.-H. ; Tsai, Y.-T. ; Chyi, J.-I.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan
Abstract :
We demonstrate a novel structure of electroabsorption modulator (EAM) at a 1.55-μm wavelength: the dual-depletion-region EAM. After an n/sup +/ delta-doped layer was inserted into the thick intrinsic region (550 nm) of a tradition p-i-n modulator, the tradeoff between driving-voltage and electrical bandwidth performance can be released effectively. This new structure can also release the burden imposed on downscaling the width or length of high-speed EAM with low driving-voltage performance. The microwave and electrical-to-optical measurement of this novel device with traveling-wave electrodes show very convincing results.
Keywords :
electro-optical modulation; electroabsorption; electrodes; high-speed optical techniques; optical communication equipment; 1.55 mum; 550 nm; dual-depletion-region modulator; electrical bandwidth performance; electrical-to-optical measurement; electroabsorption modulator; high-speed EAM performance; low-driving-voltage performance; microwave measurement; n/sup +/ delta-doped layer; p-i-n modulator; traveling-wave electrodes; Bandwidth; Electrodes; High speed optical techniques; Indium phosphide; Optical fiber communication; Optical fiber devices; Optical waveguides; Photonic band gap; Quantum well devices; Radio frequency; Electroabsorption modulators (EAMs); multiple quantum-well (MQW); optical communication;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.854402
