DocumentCode :
1176658
Title :
Townsend-type breakdown as a criterion for high-frequency vacuum arc interruption at submillimeter gaps
Author :
Smeets, René Peter Paul ; Fu, Yan Hong
Author_Institution :
Fac. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
Volume :
19
Issue :
5
fYear :
1991
fDate :
10/1/1991 12:00:00 AM
Firstpage :
767
Lastpage :
771
Abstract :
In vacuum circuit breakers, multiple reignitions give rise to HF current arcing (≈500 A; ≈200 kHz). Due to the small contact distance and the very large current gradient, at every arc-current zero pressures of several tens of millibars can be expected. Very soon thereafter (≈30 ns) this gap is dielectrically stressed by the first component of the restriking voltage (≈10 MHz), originating from parasitic impedances. The combination of the associated high electric field and the relatively high neutral density may cause Townsend-type breakdown, leading to another half-sine of continued arcing. Both dielectric stress and residual neutral density are expressed as a function of di/dt, yielding values of interruptible di/dt as a function of the contact distance with the Townsend breakdown criterion. Comparison with experiments shows fair agreement in the range of di/dt of 100-1000 A/μs and distances of 0.1-0.5 mm for two different circuits
Keywords :
Townsend discharge; arcs (electric); dielectric properties of gases; electric breakdown of gases; high-frequency discharges; 0.1 to 0.5 mm; 10 MHz; 200 kHz; 30 ns; 500 A; Townsend-type breakdown; circuit breakers; circuits; current arcing; dielectric stress; dielectrically stressed gap; high-frequency vacuum arc interruption; multiple reignitions; neutral density; parasitic impedances; restriking voltage; submillimeter gaps; Circuit breakers; Dielectrics; Hafnium; Impedance; Interrupters; Stress; Surges; Vacuum arcs; Vacuum breakdown; Voltage;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/27.108412
Filename :
108412
Link To Document :
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