DocumentCode :
1176754
Title :
Bending characteristics of asymmetric SOI polarization rotators
Author :
Deng, Henghua ; Yevick, David O. ; Chaudhuri, Sujeet K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Ont., Canada
Volume :
17
Issue :
10
fYear :
2005
Firstpage :
2113
Lastpage :
2115
Abstract :
We examine polarization conversion and radiation and transition losses in bending slanted-angle silicon-on-insulator polarization rotators.
Keywords :
bending; integrated optics; light polarisation; optical losses; optical waveguide theory; silicon-on-insulator; waveguide discontinuities; Si; asymmetric SOI rotators; bending characteristics; polarization conversion; polarization rotators; radiation losses; silicon-on-insulator; transition losses; waveguide structure; Finite element methods; Geometrical optics; Optical polarization; Optical refraction; Optical variables control; Optical waveguides; Refractive index; Silicon on insulator technology; Tellurium; Transmission line matrix methods; Beam propagation method; bending analysis; finite-element method (FEM); polarization rotator (PR); silicon-on-insulator (SOI);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2005.856334
Filename :
1512290
Link To Document :
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