Title :
New results with semiconductor drift chambers for X-ray spectroscopy
Author :
Jalas, P. ; Niemelä, A. ; Chen, W. ; Rehak, P. ; Castoldi, A. ; Longoni, A.
Author_Institution :
Outokumpu Instrum. OY, Espoo, Finland
fDate :
8/1/1994 12:00:00 AM
Abstract :
Silicon drift detectors have been tested for X-ray Spectroscopy applications. By optimizing the detector-FET connection and using a very low leakage current detector manufacturing process, it has been possible to achieve a very good energy resolution. The resolution and leakage current have been studied as a function of temperature, from room temperature down to -30°C, and as a function of active area. Also the effects influencing the peak to background ratio have been outlined
Keywords :
X-ray detection and measurement; X-ray spectroscopy; leakage currents; semiconductor counters; 243 to 273 K; Si; Si drift detectors; X-ray spectroscopy; detector-FET connection; energy resolution; low leakage current; peak to background ratio; temperature; Energy resolution; Leak detection; Leakage current; Manufacturing processes; Silicon; Spectroscopy; Temperature; Testing; X-ray detection; X-ray detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
